发明名称 |
Laser processing method for semiconductor wafer |
摘要 |
A laser processing method for a semiconductor wafer including a groove forming step of applying a pulsed laser beam having an absorption wavelength to the semiconductor wafer along a division line formed on the semiconductor wafer to thereby form a laser processed groove along the division lines on the semiconductor wafer, wherein the pulse width of the pulsed laser beam to be applied in the groove forming step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm2. |
申请公布号 |
US8252667(B2) |
申请公布日期 |
2012.08.28 |
申请号 |
US20100771749 |
申请日期 |
2010.04.30 |
申请人 |
MORIKAZU HIROSHI;TAKEDA NOBORU;MATSUMOTO HIROKAZU;DISCO CORPORATION |
发明人 |
MORIKAZU HIROSHI;TAKEDA NOBORU;MATSUMOTO HIROKAZU |
分类号 |
H01L21/301 |
主分类号 |
H01L21/301 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|