发明名称 Memory device with vertically embedded non flash non volatile memory for emulation of NAND flash memory
摘要 A system and a method for emulating a NAND memory system are disclosed. In the method, a command associated with a NAND memory is received. After receipt of the command, a vertically configured non-volatile memory array is accessed based on the command. In the system, a vertically configured non-volatile memory array is connected with an input/output controller and a memory controller. The memory controller is also connected with the input/output controller. The memory controller is operative to interface with a command associated with a NAND memory and based on the command, to access the vertically configured non-volatile memory array for a data operation, such as a read operation or write operation. An erase operation on the vertically configured non-volatile memory array is not required prior to the write operation. The vertically configured non-volatile memory array can be partitioned into planes, blocks, and sub-planes, for example.
申请公布号 US8255619(B2) 申请公布日期 2012.08.28
申请号 US201113303016 申请日期 2011.11.22
申请人 NORMAN ROBERT;UNITY SEMICONDUCTOR CORPORATION 发明人 NORMAN ROBERT
分类号 G06F12/00 主分类号 G06F12/00
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