发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: forming an amorphous silicon layer on an insulating layer; introducing oxygen into the amorphous silicon layer; and forming a silicon oxynitride layer by nitriding the amorphous silicon layer having oxygen introduced thereinto. |
申请公布号 |
US8253190(B2) |
申请公布日期 |
2012.08.28 |
申请号 |
US201113137919 |
申请日期 |
2011.09.21 |
申请人 |
MATSUSHITA DAISUKE;MITANI YUUICHIRO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
MATSUSHITA DAISUKE;MITANI YUUICHIRO |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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