发明名称 |
Gallium nitride semiconductor device with improved forward conduction |
摘要 |
A gallium nitride based semiconductor diode includes a substrate, a semiconductor body including a first heavily doped GaN layer and a second lightly doped GaN layer. The semiconductor body includes mesas projecting upwardly from a lower surface where each of the mesas includes the second GaN layer and a portion of the first GaN layer. Schottky contacts are formed on the upper surface of the mesas and ohmic contacts are formed on the lower surface of the semiconductor body. An insulating layer is formed over the Schottky and ohmic contacts. Vias are formed in the insulating layer to the Schottky contacts and vias are formed in the semiconductor body to the Ohmic contacts. An anode electrode is formed in a first metal pad in electrical contact with the Schottky contacts. A cathode electrode is formed in a second metal pad in electrical contact with the ohmic contacts. |
申请公布号 |
US8253216(B2) |
申请公布日期 |
2012.08.28 |
申请号 |
US201113191325 |
申请日期 |
2011.07.26 |
申请人 |
ZHU TINGGANG;ALPHA AND OMEGA SEMICONDUCTOR, INC. |
发明人 |
ZHU TINGGANG |
分类号 |
H01L27/095;H01L29/47 |
主分类号 |
H01L27/095 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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