发明名称 Improvements in or relating to junction transistors
摘要 780,251. Transistors. PYE, Ltd. Feb. 18, 1955 [Feb. 18, 1954], No. 4826/54. Class 37. In the manufacture of a junction transistor, a wafer 3 of semi. conductor is secured to a member 1, a portion lying over an aperture is then reduced to its final desired thickness, and electrodes 4 and 5 applied to opposite sides of the wafer. The member 1 may consist of metal, or of ceramic having a tin or other metallic layer 2 for securing the semi-conductor wafer. The wafer may consist of germanium, and the electrode material of indium. The whole may be mounted in a metal tube which assists cooling of the device.
申请公布号 GB780251(A) 申请公布日期 1957.07.31
申请号 GB19540004826 申请日期 1954.02.18
申请人 PYE LIMITED 发明人 FULLER DENNIS QUINTRELL
分类号 H01L23/04;H01L23/42;H01L29/00 主分类号 H01L23/04
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