发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A semiconductor device has a first insulation film defining a plurality of contact holes arranged along a predetermined direction. A plurality of first contact plugs is respectively formed in the contact holes. A second insulation film is formed on the first insulation film and defining an opening to expose a predetermined region of the first insulation film including a region where the first contact plugs are formed. A plurality of interconnections are formed to extend across the opening and to be in contact with top surfaces of the first contact plugs, respectively. |
申请公布号 |
US8253254(B2) |
申请公布日期 |
2012.08.28 |
申请号 |
US20100748737 |
申请日期 |
2010.03.29 |
申请人 |
UJIHARA SHINGO;ELPIDA MEMORY, INC. |
发明人 |
UJIHARA SHINGO |
分类号 |
H01L23/52;H01L23/48;H01L29/40 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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