发明名称 |
Semiconductor device and fabrication method of semiconductor device |
摘要 |
A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion. |
申请公布号 |
US8253222(B2) |
申请公布日期 |
2012.08.28 |
申请号 |
US201113027792 |
申请日期 |
2011.02.15 |
申请人 |
MOMOTA SEIJI;FUJII TAKESHI;KAMIJIMA SATOSHI;ASAI MAKOTO;FUJI ELECTRIC CO., LTD.;DENSO CORPORATION |
发明人 |
MOMOTA SEIJI;FUJII TAKESHI;KAMIJIMA SATOSHI;ASAI MAKOTO |
分类号 |
H01L29/41 |
主分类号 |
H01L29/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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