发明名称 |
Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same |
摘要 |
An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain. |
申请公布号 |
US8253196(B2) |
申请公布日期 |
2012.08.28 |
申请号 |
US20090550027 |
申请日期 |
2009.08.28 |
申请人 |
LOTFI ASHRAF W.;TROUTMAN WILLIAM W.;LOPATA DOUGLAS DEAN;NIGAM TANYA;ENPIRION, INC. |
发明人 |
LOTFI ASHRAF W.;TROUTMAN WILLIAM W.;LOPATA DOUGLAS DEAN;NIGAM TANYA |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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