发明名称 |
Metal gate transistor and resistor and method for fabricating the same |
摘要 |
A method for fabricating metal gate transistor and resistor is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation in the substrate of the resistor region; forming a tank in the shallow trench isolation of the resistor region; forming at least one gate in the transistor region and a resistor in the tank of the resistor region; and transforming the gate into a metal gate transistor. |
申请公布号 |
US8252657(B2) |
申请公布日期 |
2012.08.28 |
申请号 |
US201113072766 |
申请日期 |
2011.03.27 |
申请人 |
TSENG CHIH-YU;LIN CHIEN-TING;TSENG KUN-SZU;FAN CHENG-WEN;LIANG VICTOR-CHIANG;UNITED MICROELECTRONICS CORP. |
发明人 |
TSENG CHIH-YU;LIN CHIEN-TING;TSENG KUN-SZU;FAN CHENG-WEN;LIANG VICTOR-CHIANG |
分类号 |
H01L21/20;H01L21/8222;H01L21/8234;H01L21/8238;H01L21/8244 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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