发明名称 Semiconductor device and manufacturing method of the same
摘要 An insulating film provided between adjacent pixels is referred to as a bank, a partition, a barrier, an embankment or the like, and is provided above a source wiring or a drain wiring for a thin film transistor, or a power supply line. In particular, at an intersection portion of these wirings provided in different layers, a larger step is formed there than in other portions. Even in a case that the insulating film provided between adjacent pixels is formed by a coating method, there is a problem that thin portions are partially formed due to this step and the withstand pressure is reduced. In the present invention, a dummy material is arranged near the large step portion, particularly, around the intersection portion of wirings, so as to alleviate unevenness formed thereover. The upper wring and the lower wiring are arranged in a misaligned manner so as not to align the end portions.
申请公布号 US8253179(B2) 申请公布日期 2012.08.28
申请号 US20060410034 申请日期 2006.04.25
申请人 SAKAKURA MASAYUKI;YAMAZAKI SHUNPEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 SAKAKURA MASAYUKI;YAMAZAKI SHUNPEI
分类号 H01L31/062 主分类号 H01L31/062
代理机构 代理人
主权项
地址