| 摘要 |
A terahertz wave detecting apparatus includes a semiconductor chip 12 in which a 2-dimensional electron gas 13 is formed at a constant position from its surface, and a carbon nanotube 14, a conductive source electrode 15, a drain electrode 16 and a gate electrode 17 provided in close contact with the surface of the chip. The carbon nanotube 14 extends along the surface of the chip, where both ends of the tube are connected to the source electrode and the drain electrode of the chip, and the gate electrode 17 is spaced at a constant interval from the side surface of the carbon nanotube. Further, the apparatus includes a SD current detecting circuit 18 for applying a voltage between the source electrode and the drain electrode and for detecting SD current therebetween, a gate voltage applying circuit 19 for applying a variable gate voltage between the source electrode and the gate electrode, and a magnetic field generating device 20 for applying a variable magnetic field to the chip. |
