Method of producing silylated porous insulating film, method of producing semiconductor device, and silylated material

摘要

To appropriately perform the silylation treatment to a silica-based porous dielectric film having a plurality of pores, a method of manufacturing a silylated porous dielectric film 204c includes forming a porous dielectric film 204b having a plurality of pores and applying, to the porous dielectric film 204b, the silylation material vapor 210 obtained by evaporating the silylation material containing an organic silane compound having a hydrophobic group and a polymerization inhibitor for suppressing self-polymerization of the organic silane compound.