发明名称 |
Method for forming copper wiring in a semiconductor device |
摘要 |
A process for forming a copper wiring and the prevention of copper ion migration in a semiconductor device is disclosed herein. The process includes conducting a post-cleaning process for a copper layer that is to form the cooper wiring after already having undergone a CMP process. The post-cleaning process includes conducting a primary chemical cleaning using a citric acid-based chemical. A secondary chemical cleaning is then conducted on the copper layer having undergone the primary chemical cleaning using an ascorbic acid-based chemical. After the post-cleaning process is completed, the migration of copper ions over time is prevented thereby improving the reliability of the semiconductor device. |
申请公布号 |
US8252686(B2) |
申请公布日期 |
2012.08.28 |
申请号 |
US20090427870 |
申请日期 |
2009.04.22 |
申请人 |
PARK HYUNG SOON;KWAK NOH JUNG;YEOM SEUNG JIN;RYU CHOON KUN;JUNG JONG GOO;KIM SUNG JUN;HYNIX SEMICONDUCTOR INC. |
发明人 |
PARK HYUNG SOON;KWAK NOH JUNG;YEOM SEUNG JIN;RYU CHOON KUN;JUNG JONG GOO;KIM SUNG JUN |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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