发明名称 |
Silicon carbide semiconductor device comprising silicon carbide layer and method of manufacturing the same |
摘要 |
A method of manufacturing a silicon carbide semiconductor device having a silicon carbide layer, the method including a step of implanting at least one of Al ions, B ions and Ga ions having an implantation concentration in a range not lower than 1E19 cm−3 and not higher than 1E21 cm−3 from a main surface of the silicon carbide layer toward the inside of the silicon carbide layer while maintaining the temperature of the silicon carbide layer at 175° C. or higher, to form a p-type impurity layer; and forming a contact electrode whose back surface establishes ohmic contact with a front surface of the p-type impurity layer on the front surface of the p-type impurity layer. |
申请公布号 |
US8252672(B2) |
申请公布日期 |
2012.08.28 |
申请号 |
US20080267040 |
申请日期 |
2008.11.07 |
申请人 |
WATANABE TOMOKATSU;AYA SUNAO;MIURA NARUHISA;SAKAI KEIKO;YOSHIDA SHOHEI;TANIOKA TOSHIKAZU;NAKAO YUKIYASU;TARUI YOICHIRO;IMAIZUMI MASAYUKI;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
WATANABE TOMOKATSU;AYA SUNAO;MIURA NARUHISA;SAKAI KEIKO;YOSHIDA SHOHEI;TANIOKA TOSHIKAZU;NAKAO YUKIYASU;TARUI YOICHIRO;IMAIZUMI MASAYUKI |
分类号 |
H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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