Buried gate semiconductor device and method of manufacturing the same,申请号KR20090128833-传众专利搜索

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发明名称	Buried gate semiconductor device and method of manufacturing the same
摘要
申请公布号	KR101177485(B1)	申请公布日期	2012.08.27
申请号	KR20090128833	申请日期	2009.12.22
申请人		发明人
分类号	H01L21/336;H01L29/78	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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