METHOD FOR EVALUATING WAFER

摘要

PURPOSE: A method for evaluating a wafer is provided to efficiently determine a determination area by a selective defect like an edge ring or center disk when a defective map is determined. CONSTITUTION: A surface of a wafer is thermally processed(S110). The thermally processed surface of the wafer is etched(S120). A part of the wafer is polished(S140). A defect of an O band region of the wafer is detected with a TZDB(Time Zero Dielectric Breakdown) method. An oxide layer is formed on the surface of the wafer(S150).