NON-VOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF

摘要

PURPOSE: A nonvolatile memory device and an operating method thereof are provided to improve an erase operation speed by applying a high positive voltage to a channel and applying a voltage to increase a potential difference with the channel to a control gate electrode. CONSTITUTION: A channel(CH) is vertically protruded from a substrate(20). A plurality of memory cells are laminated along a channel. A bit line is connected to one end of the channel. A source region is connected to the other side of the channel which is composed of a semiconductor layer doped with a P type impurity or undoped semiconductor layer.