| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve contact resistance of a contact plug by forming a spacer on the upper sidewall of the contact plug. CONSTITUTION: A first interlayer insulating film(107) is formed on the upper surface of a bottom structure. A contact hole is formed by passing through the first interlayer insulating film. A contact plug(120) is formed inside the contact hole. A recess is formed at both sides of an opening of the contact hole. An etch stopping layer(121) and a second interlayer insulating film(123) are successively formed on the upper surface of an entire structure. A metal line is connected to the contact plug by passing through the etch stopping layer and the second interlayer insulating film. |
