3D-NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A nonvolatile memory device with a 3D structure and a manufacturing method thereof are provided to improve the integration of a memory device by alternatively arranging adjacent source selection lines. CONSTITUTION: A plurality of channel structures(A) include a plurality of channel films(32) and a plurality of interlayer dielectric films(31) which are alternatively laminated on a substrate. A source structure(B) includes a plurality of source lines and a plurality of interlayer dielectric films which are alternatively laminated on the substrate. The source structure is extended in a second direction cross a first direction and is contacted with the plurality of channel structures. A plurality of word lines surround the plurality of the channel structures and are parallel in the second direction.