发明名称 |
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, AND METHOD FOR PRODUCING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT |
摘要 |
Provided is an epitaxial substrate using a silicon substrate as a base substrate. An epitaxial substrate, in which a group of group-III nitride layers are formed on a (111) single crystal Si substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a surface of the substrate, includes: a first group-III nitride layer made of AlN with many defects configured of at least one kind from a columnar or granular crystal or domain; a second group-III nitride layer whose interface with the first group-III nitride layer is shaped into a three-dimensional concave-convex surface; and a third group-III nitride layer epitaxially formed on the second group-III nitride layer as a graded composition layer in which the proportion of existence of Al is smaller in a portion closer to a fourth group-III nitride.
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申请公布号 |
US2012211765(A1) |
申请公布日期 |
2012.08.23 |
申请号 |
US201213457931 |
申请日期 |
2012.04.27 |
申请人 |
MIYOSHI MAKOTO;SUMIYA SHIGEAKI;ICHIMURA MIKIYA;TANAKA MITSUHIRO;NGK INSULATORS, LTD. |
发明人 |
MIYOSHI MAKOTO;SUMIYA SHIGEAKI;ICHIMURA MIKIYA;TANAKA MITSUHIRO |
分类号 |
H01L29/20;H01L21/20 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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