发明名称 |
CONTROLLING PIT FORMATION IN A III-NITRIDE DEVICE |
摘要 |
A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer. |
申请公布号 |
KR20120093819(A) |
申请公布日期 |
2012.08.23 |
申请号 |
KR20127002546 |
申请日期 |
2010.05.27 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;PHILIPS LUMILEDS LIGHTING COMPANY LLC |
发明人 |
YI, SUNG SOO;GARDNER NATHAN F.;YE QI LAURA |
分类号 |
H01L33/32;H01L33/04;H01L33/12 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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