| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming fins capable of improving the fin height. <P>SOLUTION: In a method of forming fins, first, a multilayer structure is formed on a semiconductor substrate. The semiconductor structure includes a first layer on the semiconductor substrate, a second layer on the first layer, and a third layer on the second layer. Next, in order to form a plurality of fins composed of a plurality of portions of the semiconductor substrate and the semiconductor structure, a plurality of upper portions of the semiconductor substrate and a plurality of portions of the semiconductor structure are removed. Subsequently, the first layer is selectively oxidized while the oxidation speed of the second layer and the third layer is smaller than that of the first layer. Subsequently, gaps between the plurality of fins are filled with an insulating material after the selective oxidation. Then, at least a portion of the insulating material is recessed so that the fins are exposed to make at least one side surface or the top surface of the fins become a channel region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
