发明名称 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND SUPPLYING POWER APPARATUS AND SUPPLYING POWER METHOD OF SUBSTRATE PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To facilitate expansion of a processing apparatus such as a heat treatment apparatus, improve throughput of the processing for the apparatus itself, also facilitate management of processing capacity of respective heat treatment apparatuses, and improve yielding for the processing of a substrate to be processed. <P>SOLUTION: A substrate processing apparatus includes a plurality of heat treatment apparatus blocks constituted by stacking a plurality of heat treatment apparatuses HP having a substrate to be processed structured to be movable in a heat treatment unit and each including a temperature control mechanism 70 structured to be temperature-controllable for the substrate. It includes a coolant supply mechanism 81 for supplying a coolant which is set at a predetermined temperature and to be supplied to each of the heat treatment apparatus blocks HPB, a supply mechanism 99 in which the coolant supplied from the coolant supply mechanism 81 is branched and the coolant is supplied to each temperature control mechanism 70 of the heat treatment apparatuses HP in one heat treatment apparatus block, and an exhaust mechanism including at least one exhaust port for forming a gas flow from the temperature control mechanism side toward the heat treatment apparatus side on the side of the heat treatment apparatuses opposite to the temperature control mechanism. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012160751(A) 申请公布日期 2012.08.23
申请号 JP20120084198 申请日期 2012.04.02
申请人 TOKYO ELECTRON LTD 发明人 KIN TOKEN
分类号 H01L21/027;H01L21/306 主分类号 H01L21/027
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