发明名称 |
Semiconductor Device Comprising Self-Aligned Contact Elements and a Replacement Gate Electrode Structure |
摘要 |
When forming sophisticated semiconductor devices including high-k metal gate electrode structures, a raised drain and source configuration may be used for controlling the height upon performing a replacement gate approach, thereby providing superior conditions for forming contact elements and also obtaining a well-controllable reduced gate height.
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申请公布号 |
US2012211844(A1) |
申请公布日期 |
2012.08.23 |
申请号 |
US201213371049 |
申请日期 |
2012.02.10 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
SCHLOESSER TILL;BAARS PETER;JAKUBOWSKI FRANK |
分类号 |
H01L29/772;H01L21/28;H01L21/336 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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