发明名称 |
III-V SEMICONDUCTOR STRUCTURES WITH DIMINISHED PIT DEFECTS AND METHODS FOR FORMING THE SAME |
摘要 |
Embodiments relate to semiconductor structures and methods of forming them. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. An In-III-V semiconductor layer is grown with an Indium concentration above a saturation regime by adjusting growth conditions such as a temperature of a growth surface to create a super-saturation regime wherein the In-III-V semiconductor layer will grow with a diminished density of V-pits relative to the saturation regime.
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申请公布号 |
US2012211870(A1) |
申请公布日期 |
2012.08.23 |
申请号 |
US201113029213 |
申请日期 |
2011.02.17 |
申请人 |
FIGUET CHRISTOPHE;LINDOW ED;TOMASINI PIERRE;S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
FIGUET CHRISTOPHE;LINDOW ED;TOMASINI PIERRE |
分类号 |
H01L29/20;H01L21/20;H01L21/66 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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