发明名称 In-Situ Accuracy Control in Flux Dipping
摘要 A flux dipping apparatus includes a flux plate having a top surface; and a dipping cavity in the flux plate and recessed from the top surface. A flux leveler is disposed over the flux plate and configured to move parallel to the top surface. A piezoelectric actuator is configured to adjust a distance between the flux leveler and the top surface in response to a controlling voltage applied to electrodes of the first piezoelectric actuator.
申请公布号 US2012211547(A1) 申请公布日期 2012.08.23
申请号 US201113031040 申请日期 2011.02.18
申请人 HSIAO YI-LI;YU CHEN-HUA;LIU CHUNG-SHI;HWANG CHIEN LING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HSIAO YI-LI;YU CHEN-HUA;LIU CHUNG-SHI;HWANG CHIEN LING
分类号 B23K1/20;B23K3/08 主分类号 B23K1/20
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