发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide means for forming unevenness that prevents mirror reflection of a reflection electrode without increasing the number of manufacturing steps of an active matrix substrate. <P>SOLUTION: In a manufacturing method for an active matrix substrate used for a reflective liquid crystal display device, for forming unevenness on a surface of a pixel electrode (reflection electrode) to scatter light, convex parts 701 and 702 are formed through patterning using the same photomask as that used for forming a TFT, thereby forming unevenness on a surface of a pixel electrode 169. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012159863(A) 申请公布日期 2012.08.23
申请号 JP20120123993 申请日期 2012.05.31
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;SUZAWA HIDEOMI;ONO KOJI
分类号 G02F1/1368;G02F1/1335;G02F1/1343;H01L29/04;H01L31/036 主分类号 G02F1/1368
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