| 摘要 |
According to one embodiment, a method for manufacturing a semiconductor device includes forming a mask layer containing silicon nitride on a semiconductor layer. The method includes forming a side wall film on a side wall of the mask layer. The method includes etching the semiconductor layer using the mask layer and the side wall film to form a gate trench. The method includes forming a gate electrode in the gate trench. The method includes removing the side wall film and forming a base region and a source region in the semiconductor layer using the mask layer. The method includes forming an interlayer film covering the semiconductor layer, the gate electrode and the mask layer, and containing silicon oxide. The method includes forming a contact trench, by using the interlayer film as a mask, in a portion of the semiconductor layer under a portion where the mask layer is removed. |
