发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a liquid crystal display device with reduced contact defects, suppressed increase in contact resistance, and a high opening ratio. <P>SOLUTION: A liquid crystal display device comprises: a substrate; a thin film transistor provided on the substrate and including a gate wire, a gate insulation film, an island-shaped semiconductor film, a source region, and a drain region; a source wire provided on the substrate and connected to the source region; a drain electrode provided on the substrate and connected to the drain region; an auxiliary capacitor provided on the substrate; a pixel electrode connected to the drain electrode; and a protective film formed on the thin film transistor and the source wire. The protective film includes an opening part surrounded by the gate wire and the source wire. The thin film transistor and the source wire are covered with the protective film, and the auxiliary capacitor is not covered with the protective film. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012159849(A) 申请公布日期 2012.08.23
申请号 JP20120063042 申请日期 2012.03.21
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 HOSOYA KUNIO
分类号 G02F1/1368;G09F9/30;H01L21/336;H01L29/786 主分类号 G02F1/1368
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