| 摘要 |
A method of forming a metal-coated substrate having a CuInGaR2 film on a surface of the metal coating is performed in such a manner that reaction of the metal with Se is substantially prevented, wherein R is Se or a combination of Se and S and wherein the metal is selected from the group consisting of Mo, W, Cr, Ta, Nb, V and Ti. The method includes the steps of: providing a precursor film on the surface of the metal coating, wherein the metal coating contains oxygen in an amount sufficient to inhibit reaction of the metal with Se; and selenizing the precursor film; wherein said selenizing is limited to providing only that amount of Se required to form the CuInGaR2 film. |
