<p>The present invention relates to a substrate-processing method, which imparts a uniform roughness to the back surface of the substrate using sand blasting. The substrate-processing method includes: a slicing step of slicing an ingot into a wafer shape; a sand blasting step of spraying a polishing material onto at least one surface from among the two surfaces of the substrate sliced into the wafer shape so as to perform sand blasting; a heat treatment step of heat-treating the sand blasted substrate; and a polishing step of polishing the entirety of a surface of the heat-treated substrate. Here, the heat treatment step is performed at a temperature of around 900°C to around 1600°C.</p>
