APPARATUS FOR GROWING POLY SILICON USING SUPERHEATED VAPOR WITH A FUNCTION OF IMPROVED ENERGY EFFICIENCY AND REMOVAL POLLUTANT

摘要

PURPOSE: A polysilicon growing apparatus is provided to prevent the destruction of pipes and to reduce energy consumption by generating superheated vapor of high temperatures based on low power and rapidly heating a silicon core rod part based on the superheated vapor. CONSTITUTION: A polysilicon growing apparatus includes a bell-jar reactor(110), an electrode part(120), a silicon core rod part(130), and a superheated vapor type heating part(200). The bell-jar reactor includes a feed gas inlet and an outlet in order to generate the growing atmosphere of polysilicon in a chamber. The electrode part includes a first electrode(122) and a second electrode(124). Currents are introduced into the first electrode. The second electrode is spaced apart from the first electrode and is conducted. Both end parts of the silicon core rod part connect the first electrode and the second electrode. The silicon core rod part is heated by generating superheated vapor and supplying the superheated vapor into the bell-jar reactor.