发明名称 |
MULTILAYER SEMICONDUCTOR CHIP, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR THESE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a multilayer semiconductor chip, a semiconductor device, and manufacturing methods for these. <P>SOLUTION: A multilayer semiconductor chip includes: a first chip; a second chip stacked on the first chip; a conductive bump formed between an upper surface of the first chip and a lower surface of the second chip; an underfill material provided between the first chip and the second chip, sealing the conductive bump, formed along a sidewall of the second chip, and having an upper surface formed adjacent to an upper surface of the second chip; and a molding material disposed on an outer side face of the underfill material on the upper surface of the first chip and separated from the sidewall of the second chip by the underfill material at a cross section including the second chip and the underfill material so as not to be in contact with the sidewall of the second chip. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012160707(A) |
申请公布日期 |
2012.08.23 |
申请号 |
JP20110271676 |
申请日期 |
2011.12.12 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
LEE CHUNG-SUN;YUN SON-PIL;SONG HYUN-JUNG;KIM JING-HWAN;MIN TAE-HONG |
分类号 |
H01L25/065;H01L21/60;H01L25/07;H01L25/18 |
主分类号 |
H01L25/065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|