| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a semiconductor device of excellent characteristics, improve throughput and reduce manufacturing cost. <P>SOLUTION: Rewiring 31 is formed by performing a step of forming a copper Cu seed layer 27 on an opening OA1 and insulation films (21, 23), a step of forming a photoresist film on the Cu seed layer, a step of forming a copper film 31a on the Cu seed layer by plating growth and a step of forming a Ni film 31b on the copper film. Subsequently, after an Au film 33b is formed in an opening (OA2, pad region) on the rewiring 31, the photoresist film is removed, and passivation processing is performed on the Ni film 31b. Subsequently, the Cu seed layer 27 other than a formation region of the rewiring 31 is etched. According to those steps, a passivation film 35 is formed on a surface of the Ni film 31b and reduction in the Ni film 31b by the etching can be reduced. In addition, a trouble caused by deformation of a substrate due to thickening of the Ni film in view of reduction of the film can be reduced. <P>COPYRIGHT: (C)2012,JPO&INPIT |
