发明名称 MEMORY DEVICE AND MEMORY CONTROL UNIT
摘要 A memory device is configured to generate a signal having a temperature compensation function. The device includes a mode register configured to store error detection and correction (EDC) mode data, and an EDC pattern generator configured to receive pattern information and period information included in the mode data and to generate an EDC pattern signal based on the pattern information and the period information. The EDC pattern signal is a periodic signal obtained by repeating a signal pattern based on the pattern information at a periodic rate corresponding to a signal period based on the period information. In some cases, the EDC pattern signal may be disabled during a portion of the signal period.
申请公布号 US2012216095(A1) 申请公布日期 2012.08.23
申请号 US201213368352 申请日期 2012.02.08
申请人 HA KAE-WON;SAMSUNG ELECTRONICS CO., LTD. 发明人 HA KAE-WON
分类号 H03M13/05;G06F11/10 主分类号 H03M13/05
代理机构 代理人
主权项
地址