发明名称 METAL-INSULATOR-METAL CAPACITOR AND A METHOD OF FABRICATING THE SAME
摘要 A metal-insulator-metal (MIM) capacitor and a method of fabricating the same. The MIM capacitor is in a memory area of a wafer and comprises a top electrode formed from the same metal layer as a point contact to a via in the logic area of the wafer. The method of fabricating the MIM capacitor in a memory area of a wafer comprises forming a point contact to a via in a logic area of the wafer from the same metal layer as a top electrode of the MIM capacitor.
申请公布号 US2012211866(A1) 申请公布日期 2012.08.23
申请号 US201113030111 申请日期 2011.02.17
申请人 CHAO CHUNG-WEN;SYSTEMS ON SILICON MANUFACTURING CO. PTE. LTD. 发明人 CHAO CHUNG-WEN
分类号 H01L29/92;H01L21/02 主分类号 H01L29/92
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