发明名称 |
METAL-INSULATOR-METAL CAPACITOR AND A METHOD OF FABRICATING THE SAME |
摘要 |
A metal-insulator-metal (MIM) capacitor and a method of fabricating the same. The MIM capacitor is in a memory area of a wafer and comprises a top electrode formed from the same metal layer as a point contact to a via in the logic area of the wafer. The method of fabricating the MIM capacitor in a memory area of a wafer comprises forming a point contact to a via in a logic area of the wafer from the same metal layer as a top electrode of the MIM capacitor. |
申请公布号 |
US2012211866(A1) |
申请公布日期 |
2012.08.23 |
申请号 |
US201113030111 |
申请日期 |
2011.02.17 |
申请人 |
CHAO CHUNG-WEN;SYSTEMS ON SILICON MANUFACTURING CO. PTE. LTD. |
发明人 |
CHAO CHUNG-WEN |
分类号 |
H01L29/92;H01L21/02 |
主分类号 |
H01L29/92 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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