| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor nonvolatile memory capable of preventing wrong data writing. <P>SOLUTION: Among respective memory cells 10, with respect to the memory cell 10 to be a data writing object of a first logic level, a high-voltage source voltage is applied to a source region thereof and a low voltage is applied to a drain region thereof so that a write current flows in the memory cell 10. On the other hand, with respect to the memory cell 10 to be a data writing object of a second logic level, a high-voltage source voltage is applied to a source region thereof and a write inhibition voltage higher than a power-supply voltage VDD is applied to a drain region thereof so that the write current is prevented from flowing into the memory cell 10. <P>COPYRIGHT: (C)2012,JPO&INPIT |
