| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon nitride film forming method which enables formation of a silicon nitride film having good film characteristics under a low-temperature environment when forming the silicon nitride film by use of a plasma CVD system. <P>SOLUTION: The silicon nitride film forming method comprises: forming a silicon nitride film by making plasma of a mixed gas containing a material gas as a silicon source and another material gas as a nitrogen source under a vacuum environment by use of a plasma CVD system. In the method, tetramethyldisilazane is used as the silicon source. <P>COPYRIGHT: (C)2012,JPO&INPIT |
