发明名称 |
Method for Fabricating a Semiconductor Component based on GaN |
摘要 |
A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.
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申请公布号 |
US2012211787(A1) |
申请公布日期 |
2012.08.23 |
申请号 |
US201213398425 |
申请日期 |
2012.02.16 |
申请人 |
BADER STEFAN;EISERT DOMINIK;HAHN BERTHOLD;HAERLE VOLKER;OSRAM GMBH |
发明人 |
BADER STEFAN;EISERT DOMINIK;HAHN BERTHOLD;HAERLE VOLKER |
分类号 |
H01L33/60;H01L27/15;H01L33/00;H01L33/40;H01L33/44 |
主分类号 |
H01L33/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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