| 摘要 |
A memory device having at least one layer of oxygen ion implanted conductive metal oxide (CMO) is disclosed. The oxygen ion implanted CMO includes mobile oxygen ions. The oxygen ion implanted CMO can be annealed and the annealing can optionally occur in an ambient. An insulating metal oxide (IMO) layer is in direct contact with the oxygenated CMO layer and is electrically in series with the oxygenated CMO layer. A two-terminal memory element is formed by the IMO and CMO layers. The oxygenated CMO layer includes additional mobile oxygen ions operative to improve data retention and cycling of the two-terminal memory element. As deposited, the CMO layer can lose mobile oxygen ions during the fabrication process and the ion implantation serves to increase a quantity of mobile oxygen ions in the CMO layer. |
