<p>A light emitting device includes a silicon substrate having a (100) upper surface. The (100) upper surface has a recess, the recess being defined in part by (111) surfaces of the silicon substrate. The light emitting device includes a GaN crystal structure over one of the (111) surfaces which has a non-polar plane and a first surface along the non-polar plane. Light emission layers over the first surface have at least one quantum well comprising GaN.</p>
申请公布号
WO2012112362(A1)
申请公布日期
2012.08.23
申请号
WO2012US24361
申请日期
2012.02.08
申请人
SIPHOTON INC.;PAN, SHAOHER X.;CHEN, JAY;PAYNE, JUSTIN;HEUKEN, MICHAEL
发明人
PAN, SHAOHER X.;CHEN, JAY;PAYNE, JUSTIN;HEUKEN, MICHAEL