发明名称 PHOTORESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD
摘要 <p>The present invention is a photoresist composition to be developed with an organic solvent, which is characterized by comprising [A] a polymer having an acid-labile group, [B] an acid generator, and [C] a compound having both at least one group selected from a hydroxyl group, a carboxyl group, a group that can be converted into a carboxyl group by the action of an acid and a group having a lactone structure and a ring structure and having a molecular weight of 1,000 or less. The ring structure in the compound [C] is preferably a polycyclic alicyclic structure. The compound [C] is preferably at least one compound selected from the group consisting of compounds respectively represented by formulae (1)-(3).</p>
申请公布号 WO2012111450(A1) 申请公布日期 2012.08.23
申请号 WO2012JP52431 申请日期 2012.02.02
申请人 JSR CORPORATION;SAKAKIBARA HIROKAZU;FURUKAWA TAIICHI;MIYATA HIROMU;ITO KOJI 发明人 SAKAKIBARA HIROKAZU;FURUKAWA TAIICHI;MIYATA HIROMU;ITO KOJI
分类号 G03F7/039;G03F7/004;G03F7/038;G03F7/32;H01L21/027 主分类号 G03F7/039
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