| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a transistor including an oxide semiconductor film with extremely low off current, and provide a semiconductor device with extremely low power consumption by the use of the transistor. <P>SOLUTION: A base insulation film that releases oxygen is formed by heat treatment on a substrate, a first oxide semiconductor film is formed on the base insulation film, and the substrate is heat-treated. Next, a conductive film is formed on the first oxide semiconductor film, and the conductive film is processed into a source electrode and a drain electrode. Then, the first oxide semiconductor film is processed into a second oxide semiconductor film and just after that, a gate insulation film covering the source electrode, the drain electrode, and the second oxide semiconductor film is formed and a gate electrode is formed on the gate insulation film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
