| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a light-emitting element capable of improving crystallinity and the light-emitting element. <P>SOLUTION: A manufacturing method of a light-emitting element 1 includes: a step of forming an oxidation region composed of an aluminium oxynitride on a surface of a polycrystal substrate 2(2a) composed of an aluminium nitride by oxidizing the surface of the polycrystal substrate 2(2a) by heating the polycrystal substrate 2(2a) in an oxygen atmosphere; a step of forming a buffer layer 3 by dissolving the oxidation region by heating the polycrystal substrate 2(2a) at a temperature which is lower than a melting point of the aluminium nitride and higher than a melting point of the aluminium oxynitride and then solidifying the dissolved oxidation region by cooling the polycrystal substrate 2(2a) at a temperature which is lower than the melting point of the aluminium oxynitride; and a step of growing an optical semiconductor layer 4 containing the aluminium nitride on the buffer layer 3. This allows improvement in the crystallinity of the optical semiconductor layer 4 which is grown on the buffer layer 3. <P>COPYRIGHT: (C)2012,JPO&INPIT |
