ION IMPLANTATION METHOD AND ION IMPLANTER

摘要

PROBLEM TO BE SOLVED: To provide an ion implantation method capable of reducing a transient region having an undesired dosage distribution irrespective of a shape of ununiform dosage distribution formed within a substrate, while shortening the time required for ion implantation.

SOLUTION: According to the ion implantation method, ions are implanted to a substrate 11 by changing the relative position of an ion beam 3 and the substrate 11. A first ion implantation for forming a uniform dosage distribution on the substrate 11, and a second ion implantation for forming an ununiform dosage distribution on the substrate 11 are performed in a predetermined order. The ion beam 3 with which the substrate 11 is irradiated during the second ion implantation has a cross-section smaller in dimension than that of the ion beam 3 with which the substrate 11 is irradiated during the first ion implantation.

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