发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To solve the following problem with an electrical test of a semiconductor integrated circuit device: normally, a large-capacity bypass capacitor such as an electrolytic capacitor is installed on a test board and the like so as to prevent variations in a power supply voltage supplied through a relatively long path from a power supply in a test head to a probe and the like, however, the large-capacity bypass capacitor can only accommodate the variations for no more than several tens of nanosecond and cannot accommodate the variations for a relatively long period of time more than 100 nanoseconds. <P>SOLUTION: When an electrical test of a semiconductor integrated circuit device is executed during a manufacturing process of the semiconductor integrated circuit device, a power supply voltage is supplied from a battery installed on a test board. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012159331(A) 申请公布日期 2012.08.23
申请号 JP20110017594 申请日期 2011.01.31
申请人 RENESAS ELECTRONICS CORP 发明人 HIRASAWA GOICHI
分类号 G01R31/28;G01R31/26;H01L21/66 主分类号 G01R31/28
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