| 摘要 |
An object is to provide a photoelectric conversion device which has little loss of light absorption in a window layer and has high conversion efficiency. A photoelectric conversion device including a crystalline silicon substrate having n-type conductivity and a light-transmitting semiconductor layer having p-type conductivity between a pair of electrodes is formed. In the photoelectric conversion device, a p-n junction is formed between the crystalline silicon, substrate and the light-transmitting semiconductor layer, and the light-transmitting semiconductor layer serves as a window layer. The light-transmitting semiconductor layer includes an organic compound and an inorganic compound. As the organic compound and the inorganic compound, a material having a high hole-transport property and a transition metal oxide having an electron-accepting property are respectively used.
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