| 摘要 |
A semiconductor device and a method of fabricating a semiconductor device including a step of providing a substrate having a first region and a second region adjacent to each other, a step of forming a structure on the substrate in the first region, the structure including a top surface and a sidewall, a step of forming a first insulation layer on the substrate including the structure, the first insulation layer including a first top surface in the first region, an inclined sidewall on the sidewall of structure, and a second top surface in the second region, a step of forming a second insulation layer on the first insulation layer, and a step of planarizing the second and first insulation layers to form a common planarized surface.
|
