Embedded Semiconductor Device Including Phase Changeable Random Access Memory Element and Method of Fabricating the Same

摘要

Disclosed are an embedded semiconductor device including a phase changeable random access memory element and a method of fabricating the same. A semiconductor chip including a main memory element and a supplementary memory element is integrated on a substrate, intrinsic chip data are obtained by electrically testing the semiconductor chip, and the semiconductor chip is packaged. The intrinsic chip data are written into the supplementary memory element before the packaging of the semiconductor chip, and a memory layer of the supplementary memory element is formed of a material exhibiting an improved data retention property under thermal environmental conditions as compared with a memory layer of the main memory element.