| 摘要 |
A semiconductor device and a method of fabricating the same are provided, in which a full overlap between a storage node contact and an active region to solve an overlay in an etching process and an etching width of a storage node is increased to improve a processing margin. The semiconductor device includes a main gate and a device isolation structure disposed in a semiconductor device, an isolation pattern disposed over the device isolation structure, and contact plugs disposed at each side of the isolation pattern.
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